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GaN HEMTs target 1.2-1.4 GHz L-band radar systems.

2013-08-27 14:29:57| Industrial Newsroom - All News for Today

Based on 50 V, 0.4µ GaN on SiC foundry process, Models CGHV14250and CGHV14500 optimize performance of band-specific applications ranging from UHF to 1,800 MHz. Model CGHV14250 features 330 W typical output power, 18 dB power gain, and 77% typical drain efficiency, while Model CGHV14500 provides 500 W typical output power, 17 dB power gain, and 70% typical drain efficiency. Available in ceramic/metal flange and pill packages, both transistors feature 0.3 dB pulsed amplitude droop. This story is related to the following:Transistors |

Tags: systems target ghz radar

 

Analogue And Discretes Cree Aims At The Military With Half Kilowatt GaN HEMT

2013-08-23 05:14:32| rfglobalnet News Articles

Cree has released a 500W gallium nitride HEMTs for 1.2-1.4GHz L-Band radar amplifier systems.

Tags: half military aims cree

 
 

RFMW Launches GaN Power Doubler MMIC from TriQuint Semiconductor

2013-08-17 17:46:55| Semiconductors - Topix.net

This 24V power doubler features 24dB gain at 1GHz. P1dB is 31dBm. CATV OEM customers, subcontractors and ODMs will appreciate the benefits of GaN HEMT processes offering as much as 2dB higher gain coupled with lower power dissipation than pure GaAs devices.

Tags: power launches semiconductor gan

 

Cree Licenses GaN Device Patents to Transphorm

2013-08-05 06:00:00| Industrial Newsroom - All News for Today

Provides Access to Key Patents for GaN Power Device Market<br /> <br /> DURHAM, NC &ndash; Cree, Inc. (Nasdaq: CREE), today announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree&rsquo;s extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN Schottky diode devices for use in the field of power conversion devices. The licensed family of patents addresses various aspects of making GaN ...This story is related to the following:Schottky Diodes | High Current Transistors

Tags: device patents licenses cree

 

Gallium Nitride Power Switching Devices to be Shown by GaN Systems at ECCE Europe Conference ...

2013-08-01 06:00:00| Industrial Newsroom - All News for Today

Leading developer&rsquo;s Island Technology&trade; packs more power in a quarter of the space of silicon devices<br /> <br /> OTTAWA, Ontario &ndash; GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is exhibiting at the 15th ECCE European Conference and Exhibition taking place in the historic city of Lille, France from 3 - 5 September.<br /> <br /> GaN Systems develops the most complete range of gallium nitride power switching solutions available and is ...This story is related to the following:Materials and Material Processing Sponsored by: Sealeze - Category SponsorSearch for suppliers of: Gallium Nitrate

Tags: power systems shown europe

 

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