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TriQuint Launches GaN Amplifiers And GaAs Phase Shifters And High-Power Limiters
2013-12-09 06:50:56| wirelessdesignonline News Articles
In conjunction with the Defense Manufacturers Conference (DMC 2013) in Orlando, FL (2-5 December), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA is releasing new gallium arsenide (GaAs) phase shifters, high-power limiters and gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) amplifiers that can improve system performance, increase efficiency and reduce part counts in wide-ranging defense and commercial applications.
Tags: phase
launches
gan
amplifiers
48V GaN on Si RF Power Transistor: NPT2018 Datasheet
2013-12-05 11:08:28| rfglobalnet Downloads
This datasheet includes data on RF and DC specifications, maximum ratings and more for the Nitronex NPT2018 RF power transistor.
Tags: power
gan
transistor
datasheet
48V GaN on Si RF Power Transistor: NPT2018
2013-12-05 11:06:37| rfglobalnet Products
The NPT2018 is a GaN-on-Si (gallium nitride-on-silicon) RF power transistor with 48V operation. It’s tunable from DC to 2.5 GHz, has a greater than 60% drain efficiency, and comes in an industry standard plastic package.
Tags: power
gan
transistor
48v
GaN MMIC Power Amplifier: HMC7149 Datasheet
2013-11-20 15:08:32| rfglobalnet Downloads
This datasheet includes a general description of the HMC7149 GaN MMIC power amplifier, as well as information on its features and specifications.
Tags: power
amplifier
gan
datasheet
GaN MMIC Power Amplifier: HMC7149
2013-11-20 15:06:07| rfglobalnet Products
The HMC7149 is 10 watt GaN MMIC amplifier covering the 6-18 GHz frequency range. It’s ideal for applications involving general communications, test instrumentation, and radar.
Tags: power
amplifier
gan
power amplifier
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