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GaN Wideband 15 W Pulsed Transistor: MAGX-000035-01500P Datasheet
2014-02-03 13:58:59| rfglobalnet Downloads
The MAGX-000035-01500P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology.
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transistor
datasheet
pulsed
GaN Systems to present paper on application of SPICE models for high-power GaN elements in automotive applications
2014-02-03 12:30:24| Green Car Congress
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systems
paper
application
High Power GaN in Space Saving Plastic
2014-02-03 12:17:23| rfglobalnet Products
MACOM's high power GaN in space saving plastic is setting the standard for applications where small size and low weight are required. 3x6mm DFN packaged transistors are available in 5W, 15W, 50W, and 90W power levels. These DFN transistors are also offered in fully matched, high gain, power modules which provide highly integrated, compact solutions.
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power
space
plastic
MACOM's High Power GaN in Space Saving Plastic: A Technical Overview
2014-02-03 12:15:27| rfglobalnet Downloads
New advancements in packaging and thermal management innovation position M/A-COM Technology Solutions (MACOM) at the forefront of GaN commercialization.
Tags: high
power
space
technical
Transphorm's 600V GaN HEMT Named Product of the Year by Electronics Products Magazine
2014-01-24 06:00:00| Industrial Newsroom - All News for Today
TPH3006PS Device Garners Award for Innovative Advancement in Discrete Semiconductors<br /> <br /> Goleta, CA – Transphorm Inc. is pleased to announce that it has been honored with Electronic Products' Product of the Year Award for its TPH3006PS GaN (Gallium Nitride) device, the first 600V HEMT (High Electron Mobility Transistor) in the industry to be JEDEC qualified.<br /> <br /> The editors of Electronic Products—a leading trade publication for electronic design ...This story is related to the following:Gallium Nitride (GaN) Transistors |
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products
product
electronics
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