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Transphorm's 600V GaN Power Conversion Adopted by Delta Electronics

2013-11-14 06:00:00| Industrial Newsroom - All News for Today

Leading GaN (Gallium Nitride) innovator continues to attract global customers across multiple applications<br /> <br /> GOLETA, Calif. - Transphorm Inc. today announced that it has been invited to present at Delta Electronics' exclusive Power Design Engineering event in Shanghai, to be held Nov. 22nd, 2013. Transphorm will present its JEDEC-qualified GaN (Gallium Nitride) on Silicon HEMT (high electron mobility transistor) products and applications based on its proprietary EZ-GaN&trade; ...This story is related to the following:Gallium Nitride (GaN) Transistors |

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90W GaN Power Module

2013-11-12 15:14:38| rfglobalnet Products

M/A COM’s MAMG-001214-090PSM is an L-band 90 W surface mount GaN power module ideal for pulsed radar applications. It features a very compact size (14 x 24 mm2), GaN on SiC D-mode transistor technology, up to 3 ms pulse width and 10% duty cycle, and more.

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GaN Power Amplifier: NPA1006 Datasheet

2013-11-12 12:19:01| rfglobalnet Downloads

The NPA1006 is a GaN power amplifier ideal for applications involving test and measurement, wireless infrastructure, land mobile radio, and defense communications.

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GaN Power Amplifier: NPA1006

2013-11-12 12:14:05| rfglobalnet Products

This power amplifier covers the 20 to 1000 MHz frequency range and is ideal for applications involving test and measurement, wireless infrastructure, land mobile radio, and defense communications.

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Modelithics Announces New RF Simulation Models For TriQuint GaN Die Products

2013-11-05 04:55:42| rfglobalnet Home Page

Modelithics, Inc. has collaborated with TriQuint Semiconductor, Inc. to develop high-accuracy simulation models for five popular Gen II GaN Transistors from TriQuint, including the TGF2023-2-01, TGF2023-2-02, TGF2023-2-05, TGF2023-2-10 and TGF2023-2-20.

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