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GaN Systems Showcases Gallium Nitride Power Semiconductors at iPower 2013 - Presents Paper on ...
2013-11-01 06:00:00| Industrial Newsroom - All News for Today
Leading experts discuss latest power electronic technologies at University of Warwick 27-28 November<br /> <br /> OTTAWA, Ontario -- GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is exhibiting and presenting a technical paper at iPower 2013 Conference and Exhibition, Warwick University on 27 and 28 November. Organised by IMAPS-UK and NMI in conjunction with the University’s Electronics, Power and Microsystems Research Group, iPower 2013 brings ...This story is related to the following:Power Semiconductors | Power Transistors
Hittite Expands GaN MMIC Product Line
2013-10-29 08:27:50| rfglobalnet News Articles
Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, announced a new Gallium Nitride (GaN) MMIC power amplifier product which offers significant performance, size and durability advantages for communications, test instrumentation and radar systems operating in the 6 to 18 GHz frequency range.
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product
expands
gan
Hittite Expands GaN MMIC Product Line
2013-10-29 08:27:50| wirelessdesignonline News Articles
Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, announced a new Gallium Nitride (GaN) MMIC power amplifier product which offers significant performance, size and durability advantages for communications, test instrumentation and radar systems operating in the 6 to 18 GHz frequency range.
Tags: line
product
expands
gan
Richardson RFPD Introduces New 50V GaN On SiC RF Power Transistor From Microsemi
2013-10-24 03:38:29| rfglobalnet News Articles
Richardson RFPD, Inc. recently introduces a new 50V gallium nitride on silicon carbide (GaN on SiC) RF power high-electron-mobility transistor (HEMT) from Microsemi Corporation (Microsemi).
Tags: power
sic
introduces
richardson
20MHz To 512MHz, 20W GaN Wideband Amplifier Now Available From RFHIC
2013-10-17 06:38:52| rfglobalnet News Articles
RWS02520-10 is a unique GaN-SiC wideband amplifier that powers 43dBm over a wide instantaneous bandwidth of 20-512MHz.
Tags: amplifier
gan
wideband
20w
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