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Freescale RF Power GaN Transistor Delivers Breakthrough Wideband And Thermal Performance
2014-12-02 05:26:45| rfglobalnet News Articles
Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, recently introduced the industry’s highest thermal and wideband performance GaN device with a 125 watts continuous wave (CW) GaN-on-SiC transistor.
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Freescale RF Power GaN Transistor Delivers Breakthrough Wideband and Thermal Performance
2014-12-01 07:00:00| Freescale Press Releases
Freescale RF Power GaN Transistor Delivers Breakthrough Wideband and Thermal PerformanceFor more information click on title.
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HEMT Power Transistor suits L-Band pulsed radar applications.
2014-08-08 15:45:07| Industrial Newsroom - All News for Today
Operating from 1,200–1,400 MHz, Model MAGX-001214-650L00 guarantees 650 W of peak power with typical 19.5 dB of gain and 60% efficiency. Gold-metalized, pre-matched GaN on Silicon Carbide transistor features very high breakdown voltages, which allow stable operation at 50 V under extreme load mismatch conditions. Assembled in ceramic flange package, transistor provides rugged performance in demanding radar applications. This story is related to the following:Power Transistors |
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MACOM Announces Industry's Highest Power GaN L-Band Radar Transistor
2014-08-07 10:20:04| rfglobalnet Home Page
M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introducedrecently a new GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.
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highest
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announces
MACOM Announces Industry's Highest Power GaN L-Band Radar Transistor
2014-08-07 10:20:04| wirelessdesignonline News Articles
M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introducedrecently a new GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.
Tags: power
highest
radar
announces
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