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Tag: power transistor
Power Transistor leverages gallium nitride (GaN) technology.
2013-06-06 14:29:25| Industrial Newsroom - All News for Today
Fully qualified NPT1015 is 28 V, DC–2.5 GHz, 50 W power transistor with 15 dB saturated gain, 65% peak drain efficiency at 2 GHz, and thermal resistance is 1.9°C/W. During VSWR testing, all devices operated in saturated average power condition driven by 4,000 carrier 200 MHz wideband signal with 19.5 dB peak-to-average ratio. The devices showed 100% survivability and ~0.2 dB average change in saturated output power. SIGANTIC® GaN-on-Si process uses 4 in. silicon substrate. This story is related to the following:Power Transistors
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Power Transistor targets L-Band pulsed radar applications.
2013-05-14 14:31:02| Industrial Newsroom - All News for Today
Consisting of gold-metalized pre-matched GaN on Silicon Carbide transistor, MAGX-001214-500L00 provides 500 W of output power with 19 dB of gain, 55% efficiency, and 300 µs pulse. High breakdown voltages allow for operation at 50 V under extreme load mismatch conditions. Operating in frequency range of 1,200–1,400 MHz, HEMT transistor is available in both flanged and flangeless packages. This story is related to the following:Gallium Nitride (GaN) Transistors | Power Transistors
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02.06.13 -- SiC RF Power Transistor, GaN MMIC Amplifiers, Signal Conditioning
2013-02-05 00:22:53| rfglobalnet News Articles
02/06/13RF Globalnet - Product Showcase
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signal
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SiC RF Power Transistor: T1G4003532-FL Datasheet
2013-01-25 10:59:27| rfglobalnet Downloads
The T1G4003532-FL is an SiC RF Power Transistor in a bolt-down flanged package. It covers the DC to 3.5 GHz frequency range and is ideal for applications involving commercial and military radar, professional and military radio communications systems, jammers, wideband or narrowband filters, and test instrumentation. Download the datasheet for information on the transistor’s specifications, features, and more.
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