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Tag: power transistor
RF Power Transistor - MAGX-001214-650L00 by MACOM
2014-08-05 21:30:43| rfglobalnet Home Page
The MAGX-001214-650L00 is a gold-metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today's demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies.
Tags: power
transistor
macom
power transistor
06.12.14 -- New Transistor Reduces Power Consumption Of Microchips
2014-06-11 07:08:46| wirelessdesignonline News Articles
06/12/14 Wireless Design Online Newsletter
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power
consumption
reduces
Infineon's 700W L-Band Transistor With Highest-In-Industry Output Power Reduces BOM And Provides Higher Reliability And Ruggedness
2014-03-25 06:52:50| rfglobalnet News Articles
Infineon Technologies AG recently introduced its 700W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700W) available for radar systems operating in the 1200 – 1400 MHz frequency range.
Tags: power
higher
output
reliability
Infineon's 700W L-Band Transistor With Highest-In-Industry Output Power Reduces BOM And Provides Higher Reliability And Ruggedness
2014-03-25 06:52:50| wirelessdesignonline News Articles
Infineon Technologies AG recently introduced its 700W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700W) available for radar systems operating in the 1200 – 1400 MHz frequency range.
Tags: power
higher
output
reliability
Efficient Power Conversion Corporation (EPC) Expands High Frequency eGaN Power Transistor Family Capable Of Amplification Into The Multiple GHz Range
2014-02-21 01:23:45| electronicsweb News Articles
Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs extends its family of high-speed, high performance transistors with the EPC8010 power transistor
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