Home power transistor
 

Keywords :   


Tag: power transistor

RF Power Transistor - MAGX-001214-650L00 by MACOM

2014-08-05 21:30:43| rfglobalnet Home Page

The MAGX-001214-650L00 is a gold-metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today's demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies.

Tags: power transistor macom power transistor

 

06.12.14 -- New Transistor Reduces Power Consumption Of Microchips

2014-06-11 07:08:46| wirelessdesignonline News Articles

06/12/14 Wireless Design Online Newsletter

Tags: of power consumption reduces

 
 

Infineon's 700W L-Band Transistor With Highest-In-Industry Output Power Reduces BOM And Provides Higher Reliability And Ruggedness

2014-03-25 06:52:50| rfglobalnet News Articles

Infineon Technologies AG recently introduced its 700W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700W) available for radar systems operating in the 1200 – 1400 MHz frequency range.

Tags: power higher output reliability

 

Infineon's 700W L-Band Transistor With Highest-In-Industry Output Power Reduces BOM And Provides Higher Reliability And Ruggedness

2014-03-25 06:52:50| wirelessdesignonline News Articles

Infineon Technologies AG recently introduced its 700W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700W) available for radar systems operating in the 1200 – 1400 MHz frequency range.

Tags: power higher output reliability

 

Efficient Power Conversion Corporation (EPC) Expands High Frequency eGaN Power Transistor Family Capable Of Amplification Into The Multiple GHz Range

2014-02-21 01:23:45| electronicsweb News Articles

Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs extends its family of high-speed, high performance transistors with the EPC8010 power transistor

Tags: high family power range

 

Sites : [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] next »