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Tag: power transistor
Pulsed Power Transistor targets avionics applications.
2013-09-25 14:30:44| Industrial Newsroom - All News for Today
Operating over 1030–1090 MHz bandwidth, MAGX-001090-600L00 Ceramic GaN on SiC HEMT Power Transistor provides 600 W of output power with typ 21.4 db of gain and 63% efficiency. Device has low thermal resistance of 0.05° C/W and load mismatch tolerance of 5:1. With MTTF of over 600 years and low pulse droop of 0.2 dB, RF transistor is suited for pulsed avionics applications, such as secondary surveillance radar in air traffic control systems. This story is related to the following:RF Transistors | Gallium Nitride (GaN) Transistors |
Tags: power
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Microsemi 750 Watt GaN On SiC RF Power Transistor Delivers Unparalleled High-power Performance For Aviation Applications
2013-09-20 06:39:56| rfglobalnet News Articles
Microsemi Corporation(Nasdaq: MSCC),a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today expanded its family of radio frequency (RF) power transistors based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology with a new 750 watt (W) RF transistor.
Tags: power
performance
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delivers
MACOM's New 600 W GaN On SiC Pulsed Power Transistor Delivers Industry's Highest Reliability Rating And Lowest Pulse Droop
2013-09-20 04:15:38| rfglobalnet News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance RF, microwave and millimeter wave products, recently announced a new ceramic GaN on SiC HEMT Power Transistor for avionics applications.
Tags: power
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MACOM's New 600 W GaN On SiC Pulsed Power Transistor Delivers Industry's Highest Reliability Rating And Lowest Pulse Droop
2013-09-20 04:15:38| wirelessdesignonline News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance RF, microwave and millimeter wave products, recently announced a new ceramic GaN on SiC HEMT Power Transistor for avionics applications.
Tags: power
rating
highest
lowest
GaN on SiC RF Power Transistor delivers 750 W peak power.
2013-09-19 14:31:47| Industrial Newsroom - All News for Today
Intended for air traffic control and collision avoidance equipment, MDSGN-750ELMV is based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology. Solution delivers 750 W of peak power with 17 dB power gain and 70% typ drain efficiency when operating at 1,030/1,090 MHz. Transistor handles commercial Mode-S ELM (Extended Length Message) pulsing conditions for 1,030 MHz ground based interrogators and 1,090 MHz airborne transponders. This story is related to the following:RF Transistors |
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